Characterization of Extracted Y- and Z- Parameters for Hf Applications

In last several decades silicon-germanium (SiGe) technology has come into the global electronics marketplace. Commercial SiGe HBT facilitates transceiver designs and recommends transistor-level performance metrics which are competitive with the best III-V technologies (InP or GaAs), while sustaining strict fabrication compatibility with high yielding, low-cost, Si CMOS foundry processes on large wafers. This work depicts the complete an ample process to model the noise characteristics of a high frequency 0.1 μm SiGe HBT based on a direct parameter extraction technique. A modeling and characterization of noise parameters of SiliconGermanium Hetrojunction Bipolar transistor is examined in this issue. Initially, Noise in SiGe Hetrojunction Bipolar Transistors is conferred in detail. Later, a linear noisy two-port network and its equivalent circuit model are presented for extracting and characterizing the noise parameters, for example, noise resistance (Rn), optimum source admittance (GSopt, BSopt) and minimum noise figure (NFmin) along with its modeling significance. In next step, a novel idea that explains the impact of Ge concentration on these noise parameters is also portrayed. The noise characteristics of the SiGe HBTs are advanced to those of III–V semiconductor devices. A corroboration of objective validity of the noise modeling scheme and the extraction noise parameter is accomplished in the form of Y-, and Z-parameters. These results have been validated using a viable numerical device simulator ATLAS from Silvaco International